Anisotropic electromechanical properties of GaN ceramics caused by polarisation
Based on three-point bending tests and finite element modelling, effects of polarisation directions are investigated on the mechanical and electrical properties of GaN piezoelectric semiconductor ceramics (PSCs). It is shown that polarisation leads to anisotropic electromechanical properties of PSCs...
| Main Authors: | , , , |
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| Format: | Journal Article |
| Language: | English |
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ELSEVIER SCI LTD
2020
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| Online Access: | http://hdl.handle.net/20.500.11937/78293 |
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| author | Qin, G.S. Lu, Chunsheng Umair, M. Zhao, M.H. |
| author_facet | Qin, G.S. Lu, Chunsheng Umair, M. Zhao, M.H. |
| author_sort | Qin, G.S. |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | Based on three-point bending tests and finite element modelling, effects of polarisation directions are investigated on the mechanical and electrical properties of GaN piezoelectric semiconductor ceramics (PSCs). It is shown that polarisation leads to anisotropic electromechanical properties of PSCs. For GaN samples polarised along the vertical direction, their conductive capabilities enhance by nearly 50%, and however, there are almost no changes in ones with horizontal polarisation. Bending strengths of samples with vertical polarisation increase by 11.6% because piezoelectric charges are driven along the polarisation direction under mechanical loading. It is the correlation between mobility and polarisation direction that largely affects the fracture toughness of GaN PSCs. These experimental findings indicate that, in contrast to traditional ceramics, the electromechanical properties of GaN ceramics can be tailored through polarisation directions. |
| first_indexed | 2025-11-14T11:11:40Z |
| format | Journal Article |
| id | curtin-20.500.11937-78293 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T11:11:40Z |
| publishDate | 2020 |
| publisher | ELSEVIER SCI LTD |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-782932020-09-03T05:55:27Z Anisotropic electromechanical properties of GaN ceramics caused by polarisation Qin, G.S. Lu, Chunsheng Umair, M. Zhao, M.H. Science & Technology Technology Materials Science, Ceramics Materials Science Piezoelectric semiconductor ceramics Polarisation direction Anisotropy Electromechanical properties GaN LEAD-ZIRCONATE-TITANATE FRACTURE-TOUGHNESS PIEZOELECTRIC SEMICONDUCTOR ELECTRIC-FIELD DEEP NOTCHES STRENGTH CRACK BEHAVIOR PZT Based on three-point bending tests and finite element modelling, effects of polarisation directions are investigated on the mechanical and electrical properties of GaN piezoelectric semiconductor ceramics (PSCs). It is shown that polarisation leads to anisotropic electromechanical properties of PSCs. For GaN samples polarised along the vertical direction, their conductive capabilities enhance by nearly 50%, and however, there are almost no changes in ones with horizontal polarisation. Bending strengths of samples with vertical polarisation increase by 11.6% because piezoelectric charges are driven along the polarisation direction under mechanical loading. It is the correlation between mobility and polarisation direction that largely affects the fracture toughness of GaN PSCs. These experimental findings indicate that, in contrast to traditional ceramics, the electromechanical properties of GaN ceramics can be tailored through polarisation directions. 2020 Journal Article http://hdl.handle.net/20.500.11937/78293 10.1016/j.ceramint.2019.10.285 English ELSEVIER SCI LTD restricted |
| spellingShingle | Science & Technology Technology Materials Science, Ceramics Materials Science Piezoelectric semiconductor ceramics Polarisation direction Anisotropy Electromechanical properties GaN LEAD-ZIRCONATE-TITANATE FRACTURE-TOUGHNESS PIEZOELECTRIC SEMICONDUCTOR ELECTRIC-FIELD DEEP NOTCHES STRENGTH CRACK BEHAVIOR PZT Qin, G.S. Lu, Chunsheng Umair, M. Zhao, M.H. Anisotropic electromechanical properties of GaN ceramics caused by polarisation |
| title | Anisotropic electromechanical properties of GaN ceramics caused by polarisation |
| title_full | Anisotropic electromechanical properties of GaN ceramics caused by polarisation |
| title_fullStr | Anisotropic electromechanical properties of GaN ceramics caused by polarisation |
| title_full_unstemmed | Anisotropic electromechanical properties of GaN ceramics caused by polarisation |
| title_short | Anisotropic electromechanical properties of GaN ceramics caused by polarisation |
| title_sort | anisotropic electromechanical properties of gan ceramics caused by polarisation |
| topic | Science & Technology Technology Materials Science, Ceramics Materials Science Piezoelectric semiconductor ceramics Polarisation direction Anisotropy Electromechanical properties GaN LEAD-ZIRCONATE-TITANATE FRACTURE-TOUGHNESS PIEZOELECTRIC SEMICONDUCTOR ELECTRIC-FIELD DEEP NOTCHES STRENGTH CRACK BEHAVIOR PZT |
| url | http://hdl.handle.net/20.500.11937/78293 |