p-CuO/n-Si heterojunction solar cells with high open circuit voltage and photocurrent through interfacial engineering
Heterojunction solar cells of p‐type cupric oxide (CuO) and n‐type silicon (Si), p‐CuO/n‐Si, have been fabricated using conventional sputter and rapid thermal annealing techniques. Photovoltaic properties with an open‐circuit voltage (Voc) of 380 mV, short circuit current (Jsc) of 1.2 mA/cm2, and a...
| Main Authors: | , , , , , , , , |
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| Format: | Journal Article |
| Published: |
2015
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| Online Access: | http://hdl.handle.net/20.500.11937/74150 |