Some aspects of the field evaporation behaviour of GaSb
In-depth analysis of pulsed laser atom probe tomography (APT) data on the field evaporation of the III–V semiconductor material GaSb reveals strong variations in charge states, relative abundances of different cluster ions, multiplicity of detector events and spatial correlation of evaporation event...
| Main Authors: | , , , |
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| Format: | Journal Article |
| Published: |
2011
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| Online Access: | http://hdl.handle.net/20.500.11937/7183 |
| _version_ | 1848745293882851328 |
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| author | Müller, M. Saxey, David Smith, G. Gault, B. |
| author_facet | Müller, M. Saxey, David Smith, G. Gault, B. |
| author_sort | Müller, M. |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | In-depth analysis of pulsed laser atom probe tomography (APT) data on the field evaporation of the III–V semiconductor material GaSb reveals strong variations in charge states, relative abundances of different cluster ions, multiplicity of detector events and spatial correlation of evaporation events, as a function of the effective electric field at the specimen surface. These variations are discussed in comparison with the behaviour of two different metallic specimen materials, an Al-6XXX series alloy and pure W, studied under closely related experimental conditions in the same atom probe instrument. It is proposed that the complex behaviour of GaSb originates from a combination of spatially correlated evaporation events and the subsequent field induced dissociation of cluster ions, the latter contributing to inaccuracies in the overall atom probe composition determination for this material. |
| first_indexed | 2025-11-14T06:15:04Z |
| format | Journal Article |
| id | curtin-20.500.11937-7183 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T06:15:04Z |
| publishDate | 2011 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-71832021-01-25T04:01:16Z Some aspects of the field evaporation behaviour of GaSb Müller, M. Saxey, David Smith, G. Gault, B. In-depth analysis of pulsed laser atom probe tomography (APT) data on the field evaporation of the III–V semiconductor material GaSb reveals strong variations in charge states, relative abundances of different cluster ions, multiplicity of detector events and spatial correlation of evaporation events, as a function of the effective electric field at the specimen surface. These variations are discussed in comparison with the behaviour of two different metallic specimen materials, an Al-6XXX series alloy and pure W, studied under closely related experimental conditions in the same atom probe instrument. It is proposed that the complex behaviour of GaSb originates from a combination of spatially correlated evaporation events and the subsequent field induced dissociation of cluster ions, the latter contributing to inaccuracies in the overall atom probe composition determination for this material. 2011 Journal Article http://hdl.handle.net/20.500.11937/7183 10.1016/j.ultramic.2010.11.019 restricted |
| spellingShingle | Müller, M. Saxey, David Smith, G. Gault, B. Some aspects of the field evaporation behaviour of GaSb |
| title | Some aspects of the field evaporation behaviour of GaSb |
| title_full | Some aspects of the field evaporation behaviour of GaSb |
| title_fullStr | Some aspects of the field evaporation behaviour of GaSb |
| title_full_unstemmed | Some aspects of the field evaporation behaviour of GaSb |
| title_short | Some aspects of the field evaporation behaviour of GaSb |
| title_sort | some aspects of the field evaporation behaviour of gasb |
| url | http://hdl.handle.net/20.500.11937/7183 |