Some aspects of the field evaporation behaviour of GaSb
In-depth analysis of pulsed laser atom probe tomography (APT) data on the field evaporation of the III–V semiconductor material GaSb reveals strong variations in charge states, relative abundances of different cluster ions, multiplicity of detector events and spatial correlation of evaporation event...
| Main Authors: | , , , |
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| Format: | Journal Article |
| Published: |
2011
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| Online Access: | http://hdl.handle.net/20.500.11937/7183 |