Strengthening brittle semiconductor nanowires through stacking faults: insights from in-situ mechanical testing
Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nan...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Journal Article |
| Published: |
American Chemical Society
2013
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| Subjects: | |
| Online Access: | http://hdl.handle.net/20.500.11937/7036 |
| _version_ | 1848745250550448128 |
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| author | Chen, B. Wang, J. Gao, Q. Chen, Y. Liao, X. Lu, Chunsheng Tan, H. Mai, Y. Zou, J. Ringer, S. Gao, H. Jagadish, C. |
| author_facet | Chen, B. Wang, J. Gao, Q. Chen, Y. Liao, X. Lu, Chunsheng Tan, H. Mai, Y. Zou, J. Ringer, S. Gao, H. Jagadish, C. |
| author_sort | Chen, B. |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nanowires fail at compressive stresses of ~5.4 GPa and 6.2 GPa, respectively, which are close to those values calculated by molecular dynamics simulations. Interestingly, wurtzite nanowires with a high density of stacking faults fail at a very high compressive stress of ~9.0 GPa, demonstrating that the nanowires can be strengthened through defect engineering. The reasons for the observed phenomenon are discussed. |
| first_indexed | 2025-11-14T06:14:22Z |
| format | Journal Article |
| id | curtin-20.500.11937-7036 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T06:14:22Z |
| publishDate | 2013 |
| publisher | American Chemical Society |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-70362018-03-29T09:05:43Z Strengthening brittle semiconductor nanowires through stacking faults: insights from in-situ mechanical testing Chen, B. Wang, J. Gao, Q. Chen, Y. Liao, X. Lu, Chunsheng Tan, H. Mai, Y. Zou, J. Ringer, S. Gao, H. Jagadish, C. transmission electron microscopy strengthening in situ deformation stacking fault GaAs nanowires molecular dynamics Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nanowires fail at compressive stresses of ~5.4 GPa and 6.2 GPa, respectively, which are close to those values calculated by molecular dynamics simulations. Interestingly, wurtzite nanowires with a high density of stacking faults fail at a very high compressive stress of ~9.0 GPa, demonstrating that the nanowires can be strengthened through defect engineering. The reasons for the observed phenomenon are discussed. 2013 Journal Article http://hdl.handle.net/20.500.11937/7036 10.1021/nl402180k American Chemical Society restricted |
| spellingShingle | transmission electron microscopy strengthening in situ deformation stacking fault GaAs nanowires molecular dynamics Chen, B. Wang, J. Gao, Q. Chen, Y. Liao, X. Lu, Chunsheng Tan, H. Mai, Y. Zou, J. Ringer, S. Gao, H. Jagadish, C. Strengthening brittle semiconductor nanowires through stacking faults: insights from in-situ mechanical testing |
| title | Strengthening brittle semiconductor nanowires through stacking faults: insights from in-situ mechanical testing |
| title_full | Strengthening brittle semiconductor nanowires through stacking faults: insights from in-situ mechanical testing |
| title_fullStr | Strengthening brittle semiconductor nanowires through stacking faults: insights from in-situ mechanical testing |
| title_full_unstemmed | Strengthening brittle semiconductor nanowires through stacking faults: insights from in-situ mechanical testing |
| title_short | Strengthening brittle semiconductor nanowires through stacking faults: insights from in-situ mechanical testing |
| title_sort | strengthening brittle semiconductor nanowires through stacking faults: insights from in-situ mechanical testing |
| topic | transmission electron microscopy strengthening in situ deformation stacking fault GaAs nanowires molecular dynamics |
| url | http://hdl.handle.net/20.500.11937/7036 |