Strengthening brittle semiconductor nanowires through stacking faults: insights from in-situ mechanical testing

Strengthening brittle semiconductor nanowires through stacking faults: insights from in-situ mechanical testing

Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nan...

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Bibliographic Details
Main Authors: Chen, B., Wang, J., Gao, Q., Chen, Y., Liao, X., Lu, Chunsheng, Tan, H., Mai, Y., Zou, J., Ringer, S., Gao, H., Jagadish, C.
Format: Journal Article
Published: American Chemical Society 2013
Subjects:
transmission electron microscopy
strengthening
in situ deformation
stacking fault
GaAs nanowires
molecular dynamics
Online Access:http://hdl.handle.net/20.500.11937/7036

Internet

http://hdl.handle.net/20.500.11937/7036

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