Characterisation of the growth of a carbonaceous film on silicon

In this paper we present the first characterisation of growth of a carbonaceous film on a silicon substrate exposed to a metastable atom beam using an in situ rotating polariser ellipsometer. The initial deposition of oil due to a background partial pressure in vacuum is investigated. Subsequent exp...

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Bibliographic Details
Main Authors: Beardmore, Joshua, Palmer, A., Fabrie, C., Van Leeuwen, K., Sang, R.
Format: Journal Article
Published: Elsevier S.A. 2012
Online Access:http://hdl.handle.net/20.500.11937/66387
Description
Summary:In this paper we present the first characterisation of growth of a carbonaceous film on a silicon substrate exposed to a metastable atom beam using an in situ rotating polariser ellipsometer. The initial deposition of oil due to a background partial pressure in vacuum is investigated. Subsequent exposure of the deposited oil to a high flux metastable neon (Ne*) beam results in cross-linking of the oil film, creating a polymerised carbonaceous layer. Values for the mean residence time, polymerisation cross-section, and desorption cross-section are calculated and compared to similar studies performed for ion bombardment. Simple estimates can provide reasonable values for application of the theory to other systems. © 2011 Elsevier B.V. All rights reserved.