Air-stable doping of Bi2Se3 by MoO3 into the topological regime

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Air-stable doping of Bi2Se3 by MoO3 into the topological regime

We study vacuum deposition of molecular MoO3 as an acceptor surface transfer dopant for topological insulator Bi2Se3. We perform high-resolution photoelectron spectroscopy on in-situ cleaved Bi2Se3 single crystals and in-situ transport measurements on Bi2Se3 films grown by molecular beam epitaxy. Mo...

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Bibliographic Details
Main Authors:	Edmonds, M., Hellerstedt, J., Tadich, A., Schenk, A., O'Donnell, Kane, Tosado, J., Butch, N., Syers, P., Paglione, J., Fuhrer, M.
Format:	Conference Paper
Published:	Institute of Electrical and Electronics Engineers Inc. 2015
Online Access:	http://hdl.handle.net/20.500.11937/6302

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