Air-stable doping of Bi2Se3 by MoO3 into the topological regime

Air-stable doping of Bi2Se3 by MoO3 into the topological regime

We study vacuum deposition of molecular MoO3 as an acceptor surface transfer dopant for topological insulator Bi2Se3. We perform high-resolution photoelectron spectroscopy on in-situ cleaved Bi2Se3 single crystals and in-situ transport measurements on Bi2Se3 films grown by molecular beam epitaxy. Mo...

Full description

Bibliographic Details
Main Authors: Edmonds, M., Hellerstedt, J., Tadich, A., Schenk, A., O'Donnell, Kane, Tosado, J., Butch, N., Syers, P., Paglione, J., Fuhrer, M.
Format: Conference Paper
Published: Institute of Electrical and Electronics Engineers Inc. 2015
Online Access:http://hdl.handle.net/20.500.11937/6302

Internet

http://hdl.handle.net/20.500.11937/6302

Similar Items