Air-stable doping of Bi2Se3 by MoO3 into the topological regime
We study vacuum deposition of molecular MoO3 as an acceptor surface transfer dopant for topological insulator Bi2Se3. We perform high-resolution photoelectron spectroscopy on in-situ cleaved Bi2Se3 single crystals and in-situ transport measurements on Bi2Se3 films grown by molecular beam epitaxy. Mo...
| Main Authors: | , , , , , , , , , |
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| Format: | Conference Paper |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2015
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| Online Access: | http://hdl.handle.net/20.500.11937/6302 |
| Summary: | We study vacuum deposition of molecular MoO3 as an acceptor surface transfer dopant for topological insulator Bi2Se3. We perform high-resolution photoelectron spectroscopy on in-situ cleaved Bi2Se3 single crystals and in-situ transport measurements on Bi2Se3 films grown by molecular beam epitaxy. MoO3 is an efficient acceptor, lowering the surface Fermi energy to within -100 meV of the Dirac point, in the topological regime. A 100 nm MoO3 film provides an air-stable doping and passivation layer. |
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