Microelectronic junctions in arsenian pyrite due to impurity and mixed sulfide heterogeneity

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Microelectronic junctions in arsenian pyrite due to impurity and mixed sulfide heterogeneity

Impurities and crystal defects within the semiconducting bulk of a metal sulfide introduce energy levels within the forbidden bandgap. These levels in turn control semiconducting type and local electrical properties within single and multi-phased sulfide assemblages. Heterogeneity in sulfide semicon...

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Bibliographic Details
Main Authors:	Laird, J., MacRae, C., Halfpenny, Angela, Large, R., Ryan, C.
Format:	Journal Article
Published:	Mineralogical Society of America 2015
Subjects:	elemental mapping electrical properties heterojunction metal ore genesis Pyrite chalcopyrite laser beam induced current micro-junction semiconductors heterogeneity electrochemical mixed sulfides
Online Access:	http://hdl.handle.net/20.500.11937/6083

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