Microelectronic junctions in arsenian pyrite due to impurity and mixed sulfide heterogeneity
Impurities and crystal defects within the semiconducting bulk of a metal sulfide introduce energy levels within the forbidden bandgap. These levels in turn control semiconducting type and local electrical properties within single and multi-phased sulfide assemblages. Heterogeneity in sulfide semicon...
| Main Authors: | , , , , |
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| Format: | Journal Article |
| Published: |
Mineralogical Society of America
2015
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| Subjects: | |
| Online Access: | http://hdl.handle.net/20.500.11937/6083 |