Microelectronic junctions in arsenian pyrite due to impurity and mixed sulfide heterogeneity

Impurities and crystal defects within the semiconducting bulk of a metal sulfide introduce energy levels within the forbidden bandgap. These levels in turn control semiconducting type and local electrical properties within single and multi-phased sulfide assemblages. Heterogeneity in sulfide semicon...

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Main Authors: Laird, J., MacRae, C., Halfpenny, Angela, Large, R., Ryan, C.
Format: Journal Article
Published: Mineralogical Society of America 2015
Subjects:
Online Access:http://hdl.handle.net/20.500.11937/6083
_version_ 1848744974720434176
author Laird, J.
MacRae, C.
Halfpenny, Angela
Large, R.
Ryan, C.
author_facet Laird, J.
MacRae, C.
Halfpenny, Angela
Large, R.
Ryan, C.
author_sort Laird, J.
building Curtin Institutional Repository
collection Online Access
description Impurities and crystal defects within the semiconducting bulk of a metal sulfide introduce energy levels within the forbidden bandgap. These levels in turn control semiconducting type and local electrical properties within single and multi-phased sulfide assemblages. Heterogeneity in sulfide semiconductivity linked to these impurities can lead to p-n micro-junction formation and potential distributions near the surface that may alter redox reactivity. Secondary gold ore genesis via a micro-galvanic effect related to heterogeneity has in the past been hypothetically linked to such micro-junctions. Understanding these regions and their interaction with weathering fluids in the regolith for example requires large-scale imaging of potential distributions associated with near-surface micro-junctions and correlation with the responsible elemental distributions. Here we investigate the existence of micro-electronic junctions in a mixed sulfide assemblage using scanning laser beam induced current (LBIC) and correlate them with pyrite-chalcopyrite interfaces mapped using combined energy-dispersive spectroscopy (EDS) and wavelength-dispersive spectroscopy (WDS) on an electron hyper-probe. Junctions in a natural assemblage are positively identified for the first time.
first_indexed 2025-11-14T06:09:59Z
format Journal Article
id curtin-20.500.11937-6083
institution Curtin University Malaysia
institution_category Local University
last_indexed 2025-11-14T06:09:59Z
publishDate 2015
publisher Mineralogical Society of America
recordtype eprints
repository_type Digital Repository
spelling curtin-20.500.11937-60832017-10-02T02:28:05Z Microelectronic junctions in arsenian pyrite due to impurity and mixed sulfide heterogeneity Laird, J. MacRae, C. Halfpenny, Angela Large, R. Ryan, C. elemental mapping electrical properties heterojunction metal ore genesis Pyrite chalcopyrite laser beam induced current micro-junction semiconductors heterogeneity electrochemical mixed sulfides Impurities and crystal defects within the semiconducting bulk of a metal sulfide introduce energy levels within the forbidden bandgap. These levels in turn control semiconducting type and local electrical properties within single and multi-phased sulfide assemblages. Heterogeneity in sulfide semiconductivity linked to these impurities can lead to p-n micro-junction formation and potential distributions near the surface that may alter redox reactivity. Secondary gold ore genesis via a micro-galvanic effect related to heterogeneity has in the past been hypothetically linked to such micro-junctions. Understanding these regions and their interaction with weathering fluids in the regolith for example requires large-scale imaging of potential distributions associated with near-surface micro-junctions and correlation with the responsible elemental distributions. Here we investigate the existence of micro-electronic junctions in a mixed sulfide assemblage using scanning laser beam induced current (LBIC) and correlate them with pyrite-chalcopyrite interfaces mapped using combined energy-dispersive spectroscopy (EDS) and wavelength-dispersive spectroscopy (WDS) on an electron hyper-probe. Junctions in a natural assemblage are positively identified for the first time. 2015 Journal Article http://hdl.handle.net/20.500.11937/6083 10.2138/am-2015-4648 Mineralogical Society of America restricted
spellingShingle elemental mapping
electrical properties
heterojunction
metal ore genesis
Pyrite
chalcopyrite
laser beam induced current
micro-junction
semiconductors
heterogeneity
electrochemical
mixed sulfides
Laird, J.
MacRae, C.
Halfpenny, Angela
Large, R.
Ryan, C.
Microelectronic junctions in arsenian pyrite due to impurity and mixed sulfide heterogeneity
title Microelectronic junctions in arsenian pyrite due to impurity and mixed sulfide heterogeneity
title_full Microelectronic junctions in arsenian pyrite due to impurity and mixed sulfide heterogeneity
title_fullStr Microelectronic junctions in arsenian pyrite due to impurity and mixed sulfide heterogeneity
title_full_unstemmed Microelectronic junctions in arsenian pyrite due to impurity and mixed sulfide heterogeneity
title_short Microelectronic junctions in arsenian pyrite due to impurity and mixed sulfide heterogeneity
title_sort microelectronic junctions in arsenian pyrite due to impurity and mixed sulfide heterogeneity
topic elemental mapping
electrical properties
heterojunction
metal ore genesis
Pyrite
chalcopyrite
laser beam induced current
micro-junction
semiconductors
heterogeneity
electrochemical
mixed sulfides
url http://hdl.handle.net/20.500.11937/6083