Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500-1000°C

In this paper we describe the use of secondary-ion mass spectrometry (SIMS) and nuclear magnetic resonance (NMR) to detect the existence of amorphous silica in Ti3SiC2 oxidised at 500-1000°C. The formation of an amorphous SiO2 layer and its growth in thickness with temperature was monitored using dy...

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Main Authors: Pang, W., Low, It-Meng, Hanna, J.
Format: Journal Article
Published: Polskie Towarzystwo Ceramiczne 2010
Subjects:
Online Access:http://www.ptcer.pl/mccm/en/article-details/62/3/255
http://hdl.handle.net/20.500.11937/59706
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author Pang, W.
Low, It-Meng
Hanna, J.
author_facet Pang, W.
Low, It-Meng
Hanna, J.
author_sort Pang, W.
building Curtin Institutional Repository
collection Online Access
description In this paper we describe the use of secondary-ion mass spectrometry (SIMS) and nuclear magnetic resonance (NMR) to detect the existence of amorphous silica in Ti3SiC2 oxidised at 500-1000°C. The formation of an amorphous SiO2 layer and its growth in thickness with temperature was monitored using dynamic SIMS. A duplex structure with an outer layer of TiO2 and an inner mixture layer of SiO2 and TiO2 was observed. Results of NMR verify for the first time the direct evidence of amorphous silica formation during the oxidation of Ti3SiC2 at the temperature range 500-1000°C.
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institution Curtin University Malaysia
institution_category Local University
last_indexed 2025-11-14T10:17:31Z
publishDate 2010
publisher Polskie Towarzystwo Ceramiczne
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spelling curtin-20.500.11937-597062022-01-12T07:30:32Z Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500-1000°C Pang, W. Low, It-Meng Hanna, J. Ti3SiC2 amorphous silica oxidation SIMS NMR In this paper we describe the use of secondary-ion mass spectrometry (SIMS) and nuclear magnetic resonance (NMR) to detect the existence of amorphous silica in Ti3SiC2 oxidised at 500-1000°C. The formation of an amorphous SiO2 layer and its growth in thickness with temperature was monitored using dynamic SIMS. A duplex structure with an outer layer of TiO2 and an inner mixture layer of SiO2 and TiO2 was observed. Results of NMR verify for the first time the direct evidence of amorphous silica formation during the oxidation of Ti3SiC2 at the temperature range 500-1000°C. 2010 Journal Article http://hdl.handle.net/20.500.11937/59706 http://www.ptcer.pl/mccm/en/article-details/62/3/255 Polskie Towarzystwo Ceramiczne restricted
spellingShingle Ti3SiC2
amorphous silica
oxidation
SIMS
NMR
Pang, W.
Low, It-Meng
Hanna, J.
Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500-1000°C
title Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500-1000°C
title_full Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500-1000°C
title_fullStr Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500-1000°C
title_full_unstemmed Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500-1000°C
title_short Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500-1000°C
title_sort detection of amorphous silica in air-oxidized ti3sic2 at 500-1000°c
topic Ti3SiC2
amorphous silica
oxidation
SIMS
NMR
url http://www.ptcer.pl/mccm/en/article-details/62/3/255
http://hdl.handle.net/20.500.11937/59706