Effect of thermal annealing on nanostructure and shape transition in SiC–C nanocomposites
Controllable low-temperature (500 °C) deposition of SiC–C (3–10 vol.%C) composite ceramic films on Si(100) was achieved using a pulsed dc-magnetron puttering system in a mixture of CH4/Ar, followed by annealing in 600–1000 °C. At annealing temperatures of 800 °C or above, the formation of equiaxed...
| Main Authors: | , , , , |
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| Format: | Journal Article |
| Published: |
American Scientific Publishers
2012
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| Online Access: | http://hdl.handle.net/20.500.11937/5740 |