Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy

Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy

Atom probe tomography (APT) has been used to achieve three-dimensional characterization of a III-nitride laser diode(LD) structure grown by molecular beam epitaxy(MBE). Four APT data sets have been obtained, with fields of view up to 400 nm in depth and 120 nm in diameter. These data sets contain ma...

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Bibliographic Details
Main Authors: Bennett, S., Smeeton, T., Saxey, David, Smith, G., Hooper, S., Heffernan, J., Humphreys, C., Oliver, R.
Format: Journal Article
Published: 2012
Online Access:http://hdl.handle.net/20.500.11937/5524

Internet

http://hdl.handle.net/20.500.11937/5524

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