Focused Ion beam implantation of diamond

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Focused Ion beam implantation of diamond

The interaction between diamond and a 30 kV Ga+ focused ion beam, has been studied. Electron backscattered diffraction identified the critical dose for amorphisation of the diamond surface at 2 × 10 14 Ga+/cm2. Scanning transmission electron microscopy identified a 35 nm amorphous carbon layer which...

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Bibliographic Details
Main Authors:	McKenzie, W., Quadir, Md Zakaria, Gass, M., Munroe, P.
Format:	Journal Article
Published:	Elsevier 2011
Online Access:	http://hdl.handle.net/20.500.11937/54354

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