Focused Ion beam implantation of diamond
The interaction between diamond and a 30 kV Ga+ focused ion beam, has been studied. Electron backscattered diffraction identified the critical dose for amorphisation of the diamond surface at 2 × 10 14 Ga+/cm2. Scanning transmission electron microscopy identified a 35 nm amorphous carbon layer which...
| Main Authors: | , , , |
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| Format: | Journal Article |
| Published: |
Elsevier
2011
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| Online Access: | http://hdl.handle.net/20.500.11937/54354 |