Focused Ion beam implantation of diamond
The interaction between diamond and a 30 kV Ga+ focused ion beam, has been studied. Electron backscattered diffraction identified the critical dose for amorphisation of the diamond surface at 2 × 10 14 Ga+/cm2. Scanning transmission electron microscopy identified a 35 nm amorphous carbon layer which...
| Main Authors: | , , , |
|---|---|
| Format: | Journal Article |
| Published: |
Elsevier
2011
|
| Online Access: | http://hdl.handle.net/20.500.11937/54354 |
| _version_ | 1848759350875652096 |
|---|---|
| author | McKenzie, W. Quadir, Md Zakaria Gass, M. Munroe, P. |
| author_facet | McKenzie, W. Quadir, Md Zakaria Gass, M. Munroe, P. |
| author_sort | McKenzie, W. |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | The interaction between diamond and a 30 kV Ga+ focused ion beam, has been studied. Electron backscattered diffraction identified the critical dose for amorphisation of the diamond surface at 2 × 10 14 Ga+/cm2. Scanning transmission electron microscopy identified a 35 nm amorphous carbon layer which, at higher doses, can swell up to 31% its original volume and accommodate a significant quantity of gallium. Electron energy loss and energy dispersive X-ray spectroscopy further characterised this layer and identified both excess hydrogen and oxygen contained within a stable amorphous carbon structure. © 2011 Elsevier B.V. All rights reserved. |
| first_indexed | 2025-11-14T09:58:30Z |
| format | Journal Article |
| id | curtin-20.500.11937-54354 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T09:58:30Z |
| publishDate | 2011 |
| publisher | Elsevier |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-543542017-09-13T15:49:51Z Focused Ion beam implantation of diamond McKenzie, W. Quadir, Md Zakaria Gass, M. Munroe, P. The interaction between diamond and a 30 kV Ga+ focused ion beam, has been studied. Electron backscattered diffraction identified the critical dose for amorphisation of the diamond surface at 2 × 10 14 Ga+/cm2. Scanning transmission electron microscopy identified a 35 nm amorphous carbon layer which, at higher doses, can swell up to 31% its original volume and accommodate a significant quantity of gallium. Electron energy loss and energy dispersive X-ray spectroscopy further characterised this layer and identified both excess hydrogen and oxygen contained within a stable amorphous carbon structure. © 2011 Elsevier B.V. All rights reserved. 2011 Journal Article http://hdl.handle.net/20.500.11937/54354 10.1016/j.diamond.2011.06.022 Elsevier restricted |
| spellingShingle | McKenzie, W. Quadir, Md Zakaria Gass, M. Munroe, P. Focused Ion beam implantation of diamond |
| title | Focused Ion beam implantation of diamond |
| title_full | Focused Ion beam implantation of diamond |
| title_fullStr | Focused Ion beam implantation of diamond |
| title_full_unstemmed | Focused Ion beam implantation of diamond |
| title_short | Focused Ion beam implantation of diamond |
| title_sort | focused ion beam implantation of diamond |
| url | http://hdl.handle.net/20.500.11937/54354 |