Nanoimprint induced electrical type conversion in HgCdTe

Nanoimprint induced electrical type conversion in HgCdTe

We report supporting evidence that is consistent with p- to n-type conversion of HgCdTe that is induced by surface indentation, as the progress towards the fabrication of photovoltaic infrared detectors by direct imprinting. © 2010 IEEE.

Bibliographic Details
Main Authors: Martyniuk, M., Umana-Membreno, G., Sewell, R., Westerhout, R., Musca, C., Dell, J., Antoszewski, J., Faraone, L., Macintyre, D., Thoms, S., Ironside, Charlie
Format: Conference Paper
Published: 2010
Online Access:http://hdl.handle.net/20.500.11937/42415

Internet

http://hdl.handle.net/20.500.11937/42415

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