Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500–1000°C by NMR and SIMS
The use of secondary-ion mass spectrometry (SIMS), nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM) to detect the existence of amorphous silica in Ti3SiC2 oxidised at 500–1000°C is described. The formation of an amorphous SiO2 layer and its growth in thickness with tempera...
| Main Authors: | , , |
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| Format: | Journal Article |
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Trans Tech Publications
2010
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| Online Access: | http://hdl.handle.net/20.500.11937/38454 |
| _version_ | 1848755324781068288 |
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| author | Pang, W Low, It Meng Hanna, J. |
| author_facet | Pang, W Low, It Meng Hanna, J. |
| author_sort | Pang, W |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | The use of secondary-ion mass spectrometry (SIMS), nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM) to detect the existence of amorphous silica in Ti3SiC2 oxidised at 500–1000°C is described. The formation of an amorphous SiO2 layer and its growth in thickness with temperature was monitored using dynamic SIMS. Results of NMR and TEM verify for the first time the direct evidence of amorphous silica formation during the oxidation of Ti3SiC2 at ≤1000°C. |
| first_indexed | 2025-11-14T08:54:30Z |
| format | Journal Article |
| id | curtin-20.500.11937-38454 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T08:54:30Z |
| publishDate | 2010 |
| publisher | Trans Tech Publications |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-384542017-09-13T14:13:44Z Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500–1000°C by NMR and SIMS Pang, W Low, It Meng Hanna, J. The use of secondary-ion mass spectrometry (SIMS), nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM) to detect the existence of amorphous silica in Ti3SiC2 oxidised at 500–1000°C is described. The formation of an amorphous SiO2 layer and its growth in thickness with temperature was monitored using dynamic SIMS. Results of NMR and TEM verify for the first time the direct evidence of amorphous silica formation during the oxidation of Ti3SiC2 at ≤1000°C. 2010 Journal Article http://hdl.handle.net/20.500.11937/38454 10.4028/www.scientific.net/KEM.434-435.169 Trans Tech Publications restricted |
| spellingShingle | Pang, W Low, It Meng Hanna, J. Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500–1000°C by NMR and SIMS |
| title | Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500–1000°C by NMR and SIMS |
| title_full | Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500–1000°C by NMR and SIMS |
| title_fullStr | Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500–1000°C by NMR and SIMS |
| title_full_unstemmed | Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500–1000°C by NMR and SIMS |
| title_short | Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500–1000°C by NMR and SIMS |
| title_sort | detection of amorphous silica in air-oxidized ti3sic2 at 500–1000°c by nmr and sims |
| url | http://hdl.handle.net/20.500.11937/38454 |