Valley Splitting in a Silicon Quantum Device Platform

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Valley Splitting in a Silicon Quantum Device Platform

By suppressing an undesirable surface Umklapp process, it is possible to resolve the two most occupied states (1Г and 2 Г) in a buried two-dimensional electron gas (2DEG) in silicon. The 2DEG exists because of an atomically sharp profile of phosphorus dopants which have been formed beneath the Si(00...

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Bibliographic Details
Main Authors:	Miwa, J., Warchkow, O., Carter, Damien, Marks, Nigel, Mazzola, F., Simmons, M., Wells, J.
Format:	Journal Article
Published:	American Chemical Society 2014
Subjects:	valley-splitting quantum computer Umklapp ARPES silicon δ-layer
Online Access:	http://hdl.handle.net/20.500.11937/34200

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