Valley Splitting in a Silicon Quantum Device Platform
By suppressing an undesirable surface Umklapp process, it is possible to resolve the two most occupied states (1Г and 2 Г) in a buried two-dimensional electron gas (2DEG) in silicon. The 2DEG exists because of an atomically sharp profile of phosphorus dopants which have been formed beneath the Si(00...
| Main Authors: | , , , , , , |
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| Format: | Journal Article |
| Published: |
American Chemical Society
2014
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| Subjects: | |
| Online Access: | http://hdl.handle.net/20.500.11937/34200 |