Residual stresses in multi-layered silicon-on-sapphire thin film systems
This paper uses the finite element method to analyse the generation and evolution of residual stress in silicon-on-sapphire thin film systems during cooling. The effects of material properties, thin film structures and processing conditions, on the stress distribution were explored in detail. It was...
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| Format: | Journal Article |
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Elsevier
2011
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| Online Access: | http://hdl.handle.net/20.500.11937/31967 |
| _version_ | 1848753531599716352 |
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| author | Pramanik, Alokesh Zhang, Liangchi |
| author_facet | Pramanik, Alokesh Zhang, Liangchi |
| author_sort | Pramanik, Alokesh |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | This paper uses the finite element method to analyse the generation and evolution of residual stress in silicon-on-sapphire thin film systems during cooling. The effects of material properties, thin film structures and processing conditions, on the stress distribution were explored in detail. It was found that under certain conditions, significant stress concentration and discontinuity can take place to initiate crack and/or delamination in the systems. However, these can be minimised by controlling the buffer layer thickness. |
| first_indexed | 2025-11-14T08:26:00Z |
| format | Journal Article |
| id | curtin-20.500.11937-31967 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T08:26:00Z |
| publishDate | 2011 |
| publisher | Elsevier |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-319672019-02-19T04:27:06Z Residual stresses in multi-layered silicon-on-sapphire thin film systems Pramanik, Alokesh Zhang, Liangchi Buffer layer Residual stress Thin film Multilayer Cooling This paper uses the finite element method to analyse the generation and evolution of residual stress in silicon-on-sapphire thin film systems during cooling. The effects of material properties, thin film structures and processing conditions, on the stress distribution were explored in detail. It was found that under certain conditions, significant stress concentration and discontinuity can take place to initiate crack and/or delamination in the systems. However, these can be minimised by controlling the buffer layer thickness. 2011 Journal Article http://hdl.handle.net/20.500.11937/31967 10.1016/j.ijsolstr.2011.01.010 Elsevier fulltext |
| spellingShingle | Buffer layer Residual stress Thin film Multilayer Cooling Pramanik, Alokesh Zhang, Liangchi Residual stresses in multi-layered silicon-on-sapphire thin film systems |
| title | Residual stresses in multi-layered silicon-on-sapphire thin film systems |
| title_full | Residual stresses in multi-layered silicon-on-sapphire thin film systems |
| title_fullStr | Residual stresses in multi-layered silicon-on-sapphire thin film systems |
| title_full_unstemmed | Residual stresses in multi-layered silicon-on-sapphire thin film systems |
| title_short | Residual stresses in multi-layered silicon-on-sapphire thin film systems |
| title_sort | residual stresses in multi-layered silicon-on-sapphire thin film systems |
| topic | Buffer layer Residual stress Thin film Multilayer Cooling |
| url | http://hdl.handle.net/20.500.11937/31967 |