Residual stresses in multi-layered silicon-on-sapphire thin film systems
This paper uses the finite element method to analyse the generation and evolution of residual stress in silicon-on-sapphire thin film systems during cooling. The effects of material properties, thin film structures and processing conditions, on the stress distribution were explored in detail. It was...
| Main Authors: | , |
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| Format: | Journal Article |
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Elsevier
2011
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| Subjects: | |
| Online Access: | http://hdl.handle.net/20.500.11937/31967 |