Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry

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Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry

We report on the impact of lateral current spreading on light emission from aluminium indium antimonide (AlInSb) mid-infrared p-i-n light-emitting diodes (LEDs) grown by molecular beam epitaxy on a GaAs substrate. Due to the high effective mass of holes in AlxIn1-xSb, the resistivity of p-type mater...

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Bibliographic Details
Main Authors:	Meriggi, L., Steer, M., Ding, Y., Thayne, I., Macgregor, C., Ironside, Charlie, Sorel, M.
Format:	Journal Article
Published:	American Institute of Physics Inc. 2015
Online Access:	http://hdl.handle.net/20.500.11937/25803

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