Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry
We report on the impact of lateral current spreading on light emission from aluminium indium antimonide (AlInSb) mid-infrared p-i-n light-emitting diodes (LEDs) grown by molecular beam epitaxy on a GaAs substrate. Due to the high effective mass of holes in AlxIn1-xSb, the resistivity of p-type mater...
| Main Authors: | , , , , , , |
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| Format: | Journal Article |
| Published: |
American Institute of Physics Inc.
2015
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| Online Access: | http://hdl.handle.net/20.500.11937/25803 |