Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry
We report on the impact of lateral current spreading on light emission from aluminium indium antimonide (AlInSb) mid-infrared p-i-n light-emitting diodes (LEDs) grown by molecular beam epitaxy on a GaAs substrate. Due to the high effective mass of holes in AlxIn1-xSb, the resistivity of p-type mater...
| Main Authors: | , , , , , , |
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| Format: | Journal Article |
| Published: |
American Institute of Physics Inc.
2015
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| Online Access: | http://hdl.handle.net/20.500.11937/25803 |
| _version_ | 1848751809220313088 |
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| author | Meriggi, L. Steer, M. Ding, Y. Thayne, I. Macgregor, C. Ironside, Charlie Sorel, M. |
| author_facet | Meriggi, L. Steer, M. Ding, Y. Thayne, I. Macgregor, C. Ironside, Charlie Sorel, M. |
| author_sort | Meriggi, L. |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | We report on the impact of lateral current spreading on light emission from aluminium indium antimonide (AlInSb) mid-infrared p-i-n light-emitting diodes (LEDs) grown by molecular beam epitaxy on a GaAs substrate. Due to the high effective mass of holes in AlxIn1-xSb, the resistivity of p-type material determines the 3-D distribution of current flow in the devices. This work shows that maximum light emission, as measured by electroluminescence, and 3-times wall-plug efficiency improvement were obtained at room temperature from devices with a p-type contact grid geometry with a spacing of twice the current spreading length in the p-type material, which was measured by spatially resolved photocurrent. The LED with the optimal contact geometry exhibits improved performance at high injection current levels thanks to the more uniform carrier distribution across the device area. |
| first_indexed | 2025-11-14T07:58:37Z |
| format | Journal Article |
| id | curtin-20.500.11937-25803 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T07:58:37Z |
| publishDate | 2015 |
| publisher | American Institute of Physics Inc. |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-258032017-09-13T15:23:04Z Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry Meriggi, L. Steer, M. Ding, Y. Thayne, I. Macgregor, C. Ironside, Charlie Sorel, M. We report on the impact of lateral current spreading on light emission from aluminium indium antimonide (AlInSb) mid-infrared p-i-n light-emitting diodes (LEDs) grown by molecular beam epitaxy on a GaAs substrate. Due to the high effective mass of holes in AlxIn1-xSb, the resistivity of p-type material determines the 3-D distribution of current flow in the devices. This work shows that maximum light emission, as measured by electroluminescence, and 3-times wall-plug efficiency improvement were obtained at room temperature from devices with a p-type contact grid geometry with a spacing of twice the current spreading length in the p-type material, which was measured by spatially resolved photocurrent. The LED with the optimal contact geometry exhibits improved performance at high injection current levels thanks to the more uniform carrier distribution across the device area. 2015 Journal Article http://hdl.handle.net/20.500.11937/25803 10.1063/1.4905081 American Institute of Physics Inc. restricted |
| spellingShingle | Meriggi, L. Steer, M. Ding, Y. Thayne, I. Macgregor, C. Ironside, Charlie Sorel, M. Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry |
| title | Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry |
| title_full | Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry |
| title_fullStr | Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry |
| title_full_unstemmed | Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry |
| title_short | Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry |
| title_sort | enhanced emission from mid-infrared alinsb light-emitting diodes with p-type contact grid geometry |
| url | http://hdl.handle.net/20.500.11937/25803 |