Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures
This paper reports results of scanning ion probe studies fo silicon implantation profiles in source and drain regions of AlGaN/GaN high-electron-mobility transistor (HEMT) heterostructures. It is shown that both the undoped channel length and the transition region between implanted and non-implanted...
| Main Authors: | , , , , , , , , |
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| Format: | Journal Article |
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Springer
2008
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| Online Access: | http://hdl.handle.net/20.500.11937/24720 |
| _version_ | 1848751507942408192 |
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| author | Kocan, M. Umana-Membreno, G. Kilburn, M. Fletcher, Ian Recht, F. McCarthy, L. Mishra, U. Nener, B. Parish, G. |
| author_facet | Kocan, M. Umana-Membreno, G. Kilburn, M. Fletcher, Ian Recht, F. McCarthy, L. Mishra, U. Nener, B. Parish, G. |
| author_sort | Kocan, M. |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | This paper reports results of scanning ion probe studies fo silicon implantation profiles in source and drain regions of AlGaN/GaN high-electron-mobility transistor (HEMT) heterostructures. It is shown that both the undoped channel length and the transition region between implanted and non-implanted regions become wider with increasing depth in the structure. These results may explain the previously reported existence of resistance associated with the transition region between implanted and non-implanted semiconductor regions in AlGaN/GaN HEMT heterostructures with non-alloyed Si-implanted source and drain ohmic contact regions. |
| first_indexed | 2025-11-14T07:53:50Z |
| format | Journal Article |
| id | curtin-20.500.11937-24720 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T07:53:50Z |
| publishDate | 2008 |
| publisher | Springer |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-247202017-09-13T15:10:08Z Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures Kocan, M. Umana-Membreno, G. Kilburn, M. Fletcher, Ian Recht, F. McCarthy, L. Mishra, U. Nener, B. Parish, G. gallium nanoSIMS ohmic contacts HEMT AlGaN/GaN Alluminium ion implantation contact resistance This paper reports results of scanning ion probe studies fo silicon implantation profiles in source and drain regions of AlGaN/GaN high-electron-mobility transistor (HEMT) heterostructures. It is shown that both the undoped channel length and the transition region between implanted and non-implanted regions become wider with increasing depth in the structure. These results may explain the previously reported existence of resistance associated with the transition region between implanted and non-implanted semiconductor regions in AlGaN/GaN HEMT heterostructures with non-alloyed Si-implanted source and drain ohmic contact regions. 2008 Journal Article http://hdl.handle.net/20.500.11937/24720 10.1007/s11664-007-0336-9 Springer restricted |
| spellingShingle | gallium nanoSIMS ohmic contacts HEMT AlGaN/GaN Alluminium ion implantation contact resistance Kocan, M. Umana-Membreno, G. Kilburn, M. Fletcher, Ian Recht, F. McCarthy, L. Mishra, U. Nener, B. Parish, G. Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures |
| title | Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures |
| title_full | Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures |
| title_fullStr | Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures |
| title_full_unstemmed | Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures |
| title_short | Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures |
| title_sort | scanning ion probe studies of silicon implantation profiles in algan/gan hemt heterostructures |
| topic | gallium nanoSIMS ohmic contacts HEMT AlGaN/GaN Alluminium ion implantation contact resistance |
| url | http://hdl.handle.net/20.500.11937/24720 |