Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures

Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures

This paper reports results of scanning ion probe studies fo silicon implantation profiles in source and drain regions of AlGaN/GaN high-electron-mobility transistor (HEMT) heterostructures. It is shown that both the undoped channel length and the transition region between implanted and non-implanted...

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Bibliographic Details
Main Authors: Kocan, M., Umana-Membreno, G., Kilburn, M., Fletcher, Ian, Recht, F., McCarthy, L., Mishra, U., Nener, B., Parish, G.
Format: Journal Article
Published: Springer 2008
Subjects:
gallium
nanoSIMS
ohmic contacts
HEMT
AlGaN/GaN
Alluminium
ion implantation
contact resistance
Online Access:http://hdl.handle.net/20.500.11937/24720

Internet

http://hdl.handle.net/20.500.11937/24720

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