Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures

This paper reports results of scanning ion probe studies fo silicon implantation profiles in source and drain regions of AlGaN/GaN high-electron-mobility transistor (HEMT) heterostructures. It is shown that both the undoped channel length and the transition region between implanted and non-implanted...

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Bibliographic Details
Main Authors:	Kocan, M., Umana-Membreno, G., Kilburn, M., Fletcher, Ian, Recht, F., McCarthy, L., Mishra, U., Nener, B., Parish, G.
Format:	Journal Article
Published:	Springer 2008
Subjects:	gallium nanoSIMS ohmic contacts HEMT AlGaN/GaN Alluminium ion implantation contact resistance
Online Access:	http://hdl.handle.net/20.500.11937/24720

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Summary:	This paper reports results of scanning ion probe studies fo silicon implantation profiles in source and drain regions of AlGaN/GaN high-electron-mobility transistor (HEMT) heterostructures. It is shown that both the undoped channel length and the transition region between implanted and non-implanted regions become wider with increasing depth in the structure. These results may explain the previously reported existence of resistance associated with the transition region between implanted and non-implanted semiconductor regions in AlGaN/GaN HEMT heterostructures with non-alloyed Si-implanted source and drain ohmic contact regions.

Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures

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