Microstructural origins of localization in InGaN quantum wells

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Microstructural origins of localization in InGaN quantum wells

The startling success of GaN-based light emitting diodes despite the high density of dislocations found in typical heteroepitaxial material has been attributed to localization of carriers at non-uniformities in the quantum wells (QWs) which form the active region of such devices. Here, we review the...

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Bibliographic Details
Main Authors:	Oliver, R., Bennett, S., Zhu, T., Beesley, D., Kappers, M., Saxey, David, Cerezo, A., Humphreys, C.
Format:	Journal Article
Published:	IOP Publishing Ltd 2010
Online Access:	http://hdl.handle.net/20.500.11937/23420

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