Microstructural origins of localization in InGaN quantum wells
The startling success of GaN-based light emitting diodes despite the high density of dislocations found in typical heteroepitaxial material has been attributed to localization of carriers at non-uniformities in the quantum wells (QWs) which form the active region of such devices. Here, we review the...
| Main Authors: | , , , , , , , |
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| Format: | Journal Article |
| Published: |
IOP Publishing Ltd
2010
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| Online Access: | http://hdl.handle.net/20.500.11937/23420 |