Microstructural origins of localization in InGaN quantum wells
The startling success of GaN-based light emitting diodes despite the high density of dislocations found in typical heteroepitaxial material has been attributed to localization of carriers at non-uniformities in the quantum wells (QWs) which form the active region of such devices. Here, we review the...
| Main Authors: | , , , , , , , |
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| Format: | Journal Article |
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IOP Publishing Ltd
2010
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| Online Access: | http://hdl.handle.net/20.500.11937/23420 |
| _version_ | 1848751146050519040 |
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| author | Oliver, R. Bennett, S. Zhu, T. Beesley, D. Kappers, M. Saxey, David Cerezo, A. Humphreys, C. |
| author_facet | Oliver, R. Bennett, S. Zhu, T. Beesley, D. Kappers, M. Saxey, David Cerezo, A. Humphreys, C. |
| author_sort | Oliver, R. |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | The startling success of GaN-based light emitting diodes despite the high density of dislocations found in typical heteroepitaxial material has been attributed to localization of carriers at non-uniformities in the quantum wells (QWs) which form the active region of such devices. Here, we review the different possible structures within the QWs which could act as localization sites, at length scales ranging from the atomic to the tens of nanometre range. In some QWs several localization mechanisms could be operational, but the challenge remains to optimize the QWs' structure to achieve improved quantum efficiencies, particularly at high excitation powers. © 2010 IOP Publishing Ltd. |
| first_indexed | 2025-11-14T07:48:05Z |
| format | Journal Article |
| id | curtin-20.500.11937-23420 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T07:48:05Z |
| publishDate | 2010 |
| publisher | IOP Publishing Ltd |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-234202018-03-29T09:06:48Z Microstructural origins of localization in InGaN quantum wells Oliver, R. Bennett, S. Zhu, T. Beesley, D. Kappers, M. Saxey, David Cerezo, A. Humphreys, C. The startling success of GaN-based light emitting diodes despite the high density of dislocations found in typical heteroepitaxial material has been attributed to localization of carriers at non-uniformities in the quantum wells (QWs) which form the active region of such devices. Here, we review the different possible structures within the QWs which could act as localization sites, at length scales ranging from the atomic to the tens of nanometre range. In some QWs several localization mechanisms could be operational, but the challenge remains to optimize the QWs' structure to achieve improved quantum efficiencies, particularly at high excitation powers. © 2010 IOP Publishing Ltd. 2010 Journal Article http://hdl.handle.net/20.500.11937/23420 10.1088/0022-3727/43/35/354003 IOP Publishing Ltd restricted |
| spellingShingle | Oliver, R. Bennett, S. Zhu, T. Beesley, D. Kappers, M. Saxey, David Cerezo, A. Humphreys, C. Microstructural origins of localization in InGaN quantum wells |
| title | Microstructural origins of localization in InGaN quantum wells |
| title_full | Microstructural origins of localization in InGaN quantum wells |
| title_fullStr | Microstructural origins of localization in InGaN quantum wells |
| title_full_unstemmed | Microstructural origins of localization in InGaN quantum wells |
| title_short | Microstructural origins of localization in InGaN quantum wells |
| title_sort | microstructural origins of localization in ingan quantum wells |
| url | http://hdl.handle.net/20.500.11937/23420 |