Determining the Electronic Confinement of a Subsurface Metallic State

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Determining the Electronic Confinement of a Subsurface Metallic State

Dopant profiles in semiconductors are important for understanding nanoscale electronics. Highly conductive and extremely confined phosphorus doping profiles in silicon, known as Si:P δ-layers, are of particular interest for quantum computer applications, yet a quantitative measure of their electroni...

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Bibliographic Details
Main Authors:	Mazzola, F., Edmonds, M., Høydalsvik, K., Carter, Damien, Marks, Nigel, Cowie, B., Thomsen, L., Miwa, J., Simmons, M., Wells, J.
Format:	Journal Article
Published:	American Chemical Society 2014
Subjects:	2D confinement Si:P d-layers quantum computation photoemission
Online Access:	http://hdl.handle.net/20.500.11937/15133

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