Determining the Electronic Confinement of a Subsurface Metallic State

Determining the Electronic Confinement of a Subsurface Metallic State

Dopant profiles in semiconductors are important for understanding nanoscale electronics. Highly conductive and extremely confined phosphorus doping profiles in silicon, known as Si:P δ-layers, are of particular interest for quantum computer applications, yet a quantitative measure of their electroni...

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Bibliographic Details
Main Authors: Mazzola, F., Edmonds, M., Høydalsvik, K., Carter, Damien, Marks, Nigel, Cowie, B., Thomsen, L., Miwa, J., Simmons, M., Wells, J.
Format: Journal Article
Published: American Chemical Society 2014
Subjects:
2D confinement
Si:P d-layers
quantum computation
photoemission
Online Access:http://hdl.handle.net/20.500.11937/15133

Internet

http://hdl.handle.net/20.500.11937/15133

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