Determining the Electronic Confinement of a Subsurface Metallic State
Dopant profiles in semiconductors are important for understanding nanoscale electronics. Highly conductive and extremely confined phosphorus doping profiles in silicon, known as Si:P δ-layers, are of particular interest for quantum computer applications, yet a quantitative measure of their electroni...
| Main Authors: | , , , , , , , , , |
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| Format: | Journal Article |
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American Chemical Society
2014
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| Online Access: | http://hdl.handle.net/20.500.11937/15133 |
| _version_ | 1848748811498815488 |
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| author | Mazzola, F. Edmonds, M. Høydalsvik, K. Carter, Damien Marks, Nigel Cowie, B. Thomsen, L. Miwa, J. Simmons, M. Wells, J. |
| author_facet | Mazzola, F. Edmonds, M. Høydalsvik, K. Carter, Damien Marks, Nigel Cowie, B. Thomsen, L. Miwa, J. Simmons, M. Wells, J. |
| author_sort | Mazzola, F. |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | Dopant profiles in semiconductors are important for understanding nanoscale electronics. Highly conductive and extremely confined phosphorus doping profiles in silicon, known as Si:P δ-layers, are of particular interest for quantum computer applications, yet a quantitative measure of their electronic profile has been lacking. Using resonantly enhanced photoemission spectroscopy, we reveal the real-space breadth of the Si:P δ-layer occupied states and gain a rare view into the nature of the confined orbitals. We find that the occupied valley-split states of the δ-layer, the so-called 1Γ and 2Γ, are exceptionally confined with an electronic profile of a mere 0.40 to 0.52 nm at full width at half-maximum, a result that is in excellent agreement with density functional theory calculations. Furthermore, the bulk-like Si 3pz orbital from which the occupied states are derived is sufficiently confined to lose most of its pz-like character, explaining the strikingly large valley splitting observed for the 1Γ and 2Γ states. |
| first_indexed | 2025-11-14T07:10:58Z |
| format | Journal Article |
| id | curtin-20.500.11937-15133 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T07:10:58Z |
| publishDate | 2014 |
| publisher | American Chemical Society |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-151332017-09-13T15:04:06Z Determining the Electronic Confinement of a Subsurface Metallic State Mazzola, F. Edmonds, M. Høydalsvik, K. Carter, Damien Marks, Nigel Cowie, B. Thomsen, L. Miwa, J. Simmons, M. Wells, J. 2D confinement Si:P d-layers quantum computation photoemission Dopant profiles in semiconductors are important for understanding nanoscale electronics. Highly conductive and extremely confined phosphorus doping profiles in silicon, known as Si:P δ-layers, are of particular interest for quantum computer applications, yet a quantitative measure of their electronic profile has been lacking. Using resonantly enhanced photoemission spectroscopy, we reveal the real-space breadth of the Si:P δ-layer occupied states and gain a rare view into the nature of the confined orbitals. We find that the occupied valley-split states of the δ-layer, the so-called 1Γ and 2Γ, are exceptionally confined with an electronic profile of a mere 0.40 to 0.52 nm at full width at half-maximum, a result that is in excellent agreement with density functional theory calculations. Furthermore, the bulk-like Si 3pz orbital from which the occupied states are derived is sufficiently confined to lose most of its pz-like character, explaining the strikingly large valley splitting observed for the 1Γ and 2Γ states. 2014 Journal Article http://hdl.handle.net/20.500.11937/15133 10.1021/nn5045239 American Chemical Society fulltext |
| spellingShingle | 2D confinement Si:P d-layers quantum computation photoemission Mazzola, F. Edmonds, M. Høydalsvik, K. Carter, Damien Marks, Nigel Cowie, B. Thomsen, L. Miwa, J. Simmons, M. Wells, J. Determining the Electronic Confinement of a Subsurface Metallic State |
| title | Determining the Electronic Confinement of a Subsurface Metallic State |
| title_full | Determining the Electronic Confinement of a Subsurface Metallic State |
| title_fullStr | Determining the Electronic Confinement of a Subsurface Metallic State |
| title_full_unstemmed | Determining the Electronic Confinement of a Subsurface Metallic State |
| title_short | Determining the Electronic Confinement of a Subsurface Metallic State |
| title_sort | determining the electronic confinement of a subsurface metallic state |
| topic | 2D confinement Si:P d-layers quantum computation photoemission |
| url | http://hdl.handle.net/20.500.11937/15133 |