Improved optoelectronic characteristics of post-annealed Ti/AI/ITO transparent conducting electrodes deposited on n-GaN
We report on the improved structural, electrical and optical properties of the Ti/AI/ITO transparent conducting electrodes (TCEs) deposited on n-GaN. The TCEs were deposited by RF/DC magnetron sputtering under Ar ambient at room temperature. The as-deposited TCEs were annealed at 600°C in N₂ ambient...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://eprints.uthm.edu.my/6960/ |