Statistical design of ultra-thin SiO2 for nanodevices
A study was performed on a series of ultra thin SiO2 films in order to determine the factors affecting the oxide growth and also the effect of temperature to the film surface roughness. The samples of ultra thin SiO 2 were prepared through a dry oxidation method using a high temperature furnace. The...
| Main Authors: | , , , |
|---|---|
| Published: |
2017
|
| Online Access: | http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5258 |