Robust optimization of a silicon lateral pin photodiode
The objective of this paper is to optimize the process parameters for a Si lateral p-in photodiode to obtain high responsivity, frequency response, quantum efficiency and low transient time Four process parameters were chosen, namely the intrinsic region length, photo-absorption layer thickness, the...
| Main Authors: | , , , |
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| Published: |
2017
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| Online Access: | http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5227 |