High performance silicon lateral PIN photodiode
Start Photodetectors with high responsivity in Si-related processes are required for high speed optoelectronic applications such as fiber optic data communication systems. In this paper, the performance of a virtual lateral PIN photodiode with intensity response in the 200-1000 nm wavelength range w...
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2017
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uniten-123456789-52182018-01-23T04:29:04Z High performance silicon lateral PIN photodiode Tasirin, S.K. Menon, P.S. Ahmad, I. Abdullah, S.F. Start Photodetectors with high responsivity in Si-related processes are required for high speed optoelectronic applications such as fiber optic data communication systems. In this paper, the performance of a virtual lateral PIN photodiode with intensity response in the 200-1000 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.62 A/W and 13.1 GHz respectively for design parameters of intrinsic region length of 6 μm, photoabsorption layer thickness of 50 μm, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the decrease in device size enabled the realization of a high performance lateral p-i-n photodiode. © Published under licence by IOP Publishing Ltd. 2017-11-15T02:56:42Z 2017-11-15T02:56:42Z 2013 Article 10.1088/1755-1315/16/1/012032 en |
| repository_type |
Digital Repository |
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Local University |
| institution |
Universiti Tenaga Nasional |
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UNITEN Institutional Repository |
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Online Access |
| language |
English |
| description |
Start Photodetectors with high responsivity in Si-related processes are required for high speed optoelectronic applications such as fiber optic data communication systems. In this paper, the performance of a virtual lateral PIN photodiode with intensity response in the 200-1000 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.62 A/W and 13.1 GHz respectively for design parameters of intrinsic region length of 6 μm, photoabsorption layer thickness of 50 μm, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the decrease in device size enabled the realization of a high performance lateral p-i-n photodiode. © Published under licence by IOP Publishing Ltd. |
| format |
Article |
| author |
Tasirin, S.K. Menon, P.S. Ahmad, I. Abdullah, S.F. |
| spellingShingle |
Tasirin, S.K. Menon, P.S. Ahmad, I. Abdullah, S.F. High performance silicon lateral PIN photodiode |
| author_facet |
Tasirin, S.K. Menon, P.S. Ahmad, I. Abdullah, S.F. |
| author_sort |
Tasirin, S.K. |
| title |
High performance silicon lateral PIN photodiode |
| title_short |
High performance silicon lateral PIN photodiode |
| title_full |
High performance silicon lateral PIN photodiode |
| title_fullStr |
High performance silicon lateral PIN photodiode |
| title_full_unstemmed |
High performance silicon lateral PIN photodiode |
| title_sort |
high performance silicon lateral pin photodiode |
| publishDate |
2017 |
| first_indexed |
2018-09-05T07:33:21Z |
| last_indexed |
2018-09-05T07:33:21Z |
| _version_ |
1610751989140946944 |