Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide
S-bend SOI waveguide is known as the most critical part for SOI device design. Normalized output power for the different parameter of the S-bend waveguide has been analyzed using OptiBPM simulator in 1.55 μm communication wavelength. Dimension of 5 × 5 μm2 single-mode rib waveguide is chosen. The va...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier GmbH
2017
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| Subjects: | |
| Online Access: | http://ir.unimas.my/14954/ http://ir.unimas.my/14954/ http://ir.unimas.my/14954/ http://ir.unimas.my/14954/1/Large-cross-section-rib-silicon-on-insulator-%28SOI%29-S-bend-waveguide_2017_Optik.html |