Effect of Oxidation Temperature on Physical and Electrical Properties of Sm2O3 Thin-Film Gate Oxide on Si Substrate
Thermal oxidation of 150-nm sputtered pure samarium metal film on silicon substrate has been carried out in oxygen ambient at various temperatures (600°C to 900°C) for 15 min and the effect of the oxidation temperature on the structural, chemical, and electrical properties of the resulting Sm2O3 lay...
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| Format: | Article |
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Institute of Electrical and Electronics Engineers (IEEE)
2016
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| Online Access: | http://dx.doi.org/10.1007/s11664-016-4694-z http://dx.doi.org/10.1007/s11664-016-4694-z |