S-Band Gain Improvement Using a Thulium–Aluminum Co-Doped Photonic Crystal Fiber Amplifier

An extended method for gain and noise figure enhancement in the S-band using a thulium-doped photonic crystal fiber amplifier (TD-PCFA) is proposed and shown by numerical simulation. The principle behind the enhancement is the suppression of unwanted amplified spontaneous emission (ASE) using the PC...

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Main Authors:	Emami, S.D., Muhammad, A.R., Muhamad-Yasin, S.Z., Mat-Sharif, K.A., Zulkifli, M.I., Adikan, F.R.M., Ahmad, H., Abdul-Rashid, H.A.
Format:	Article
Published:	Institute of Electrical and Electronics Engineers (IEEE) 2014
Subjects:	QC Physics TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6963583 http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6963583

id	um-14322
recordtype	eprints
spelling	um-143222017-10-13T06:43:59Z S-Band Gain Improvement Using a Thulium–Aluminum Co-Doped Photonic Crystal Fiber Amplifier Emami, S.D. Muhammad, A.R. Muhamad-Yasin, S.Z. Mat-Sharif, K.A. Zulkifli, M.I. Adikan, F.R.M. Ahmad, H. Abdul-Rashid, H.A. QC Physics TK Electrical engineering. Electronics Nuclear engineering An extended method for gain and noise figure enhancement in the S-band using a thulium-doped photonic crystal fiber amplifier (TD-PCFA) is proposed and shown by numerical simulation. The principle behind the enhancement is the suppression of unwanted amplified spontaneous emission (ASE) using the PCF structure. This proposed PCF achieves the intended band-pass by doping the cladding with high index material and realizes appropriate short and long cut-off wavelengths by enlarging the air-holes surrounding the doped core region. The PCF geometrical structure is optimized so that high losses occur below the short cut-off wavelength (800 nm) and beyond the long cut-off wavelength (1750 nm). Furthermore, the PCF geometrical structure design allows for high ASE suppression at 800- and 1800-nm band, thus increasing the population inversion needed for amplification in S-band region as the 1050-nm pump propagates light in the band-pass. The proposed TD-PCFA demonstrates gain enhancements of 3-6 dB between 1420 and 1470 nm. Institute of Electrical and Electronics Engineers (IEEE) 2014-12 Article PeerReviewed http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6963583 Emami, S.D.; Muhammad, A.R.; Muhamad-Yasin, S.Z.; Mat-Sharif, K.A.; Zulkifli, M.I.; Adikan, F.R.M.; Ahmad, H.; Abdul-Rashid, H.A. (2014) S-Band Gain Improvement Using a Thulium–Aluminum Co-Doped Photonic Crystal Fiber Amplifier. IEEE Photonics Journal <http://eprints.um.edu.my/view/publication/IEEE_Photonics_Journal.html>, 6 (6). ISSN 1943-0655 http://eprints.um.edu.my/14322/
repository_type	Digital Repository
institution_category	Local University
institution	University Malaya
building	UM Research Repository
collection	Online Access
topic	QC Physics TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	QC Physics TK Electrical engineering. Electronics Nuclear engineering Emami, S.D. Muhammad, A.R. Muhamad-Yasin, S.Z. Mat-Sharif, K.A. Zulkifli, M.I. Adikan, F.R.M. Ahmad, H. Abdul-Rashid, H.A. S-Band Gain Improvement Using a Thulium–Aluminum Co-Doped Photonic Crystal Fiber Amplifier
description	An extended method for gain and noise figure enhancement in the S-band using a thulium-doped photonic crystal fiber amplifier (TD-PCFA) is proposed and shown by numerical simulation. The principle behind the enhancement is the suppression of unwanted amplified spontaneous emission (ASE) using the PCF structure. This proposed PCF achieves the intended band-pass by doping the cladding with high index material and realizes appropriate short and long cut-off wavelengths by enlarging the air-holes surrounding the doped core region. The PCF geometrical structure is optimized so that high losses occur below the short cut-off wavelength (800 nm) and beyond the long cut-off wavelength (1750 nm). Furthermore, the PCF geometrical structure design allows for high ASE suppression at 800- and 1800-nm band, thus increasing the population inversion needed for amplification in S-band region as the 1050-nm pump propagates light in the band-pass. The proposed TD-PCFA demonstrates gain enhancements of 3-6 dB between 1420 and 1470 nm.
format	Article
author	Emami, S.D. Muhammad, A.R. Muhamad-Yasin, S.Z. Mat-Sharif, K.A. Zulkifli, M.I. Adikan, F.R.M. Ahmad, H. Abdul-Rashid, H.A.
author_facet	Emami, S.D. Muhammad, A.R. Muhamad-Yasin, S.Z. Mat-Sharif, K.A. Zulkifli, M.I. Adikan, F.R.M. Ahmad, H. Abdul-Rashid, H.A.
author_sort	Emami, S.D.
title	S-Band Gain Improvement Using a Thulium–Aluminum Co-Doped Photonic Crystal Fiber Amplifier
title_short	S-Band Gain Improvement Using a Thulium–Aluminum Co-Doped Photonic Crystal Fiber Amplifier
title_full	S-Band Gain Improvement Using a Thulium–Aluminum Co-Doped Photonic Crystal Fiber Amplifier
title_fullStr	S-Band Gain Improvement Using a Thulium–Aluminum Co-Doped Photonic Crystal Fiber Amplifier
title_full_unstemmed	S-Band Gain Improvement Using a Thulium–Aluminum Co-Doped Photonic Crystal Fiber Amplifier
title_sort	s-band gain improvement using a thulium–aluminum co-doped photonic crystal fiber amplifier
publisher	Institute of Electrical and Electronics Engineers (IEEE)
publishDate	2014
url	http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6963583 http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6963583
first_indexed	2018-09-06T06:21:51Z
last_indexed	2018-09-06T06:21:51Z
_version_	1610838086895271936

S-Band Gain Improvement Using a Thulium–Aluminum Co-Doped Photonic Crystal Fiber Amplifier

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