The Influence of Different Partial Pressure on the Fabrication of InGaO Ultraviolet Photodetectors
A metal–semiconductor–metal ultraviolet photodetector has been fabricated with a radiofrequency (RF)-sputtered InGaO thin film. Results for the devices fabricated under different oxygen partial pressure are here in discussed. Under low oxygen partial pressure, the devices work in the photoconductive...
| Main Authors: | , , |
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| Format: | Online |
| Language: | English |
| Published: |
MDPI
2016
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5191125/ |