Robust fractional quantum Hall effect in the N=2 Landau level in bilayer graphene

Robust fractional quantum Hall effect in the N=2 Landau level in bilayer graphene

The fractional quantum Hall effect is a canonical example of electron–electron interactions producing new ground states in many-body systems. Most fractional quantum Hall studies have focussed on the lowest Landau level, whose fractional states are successfully explained by the composite fermion mod...

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Main Authors: Diankov, Georgi, Liang, Chi-Te, Amet, François, Gallagher, Patrick, Lee, Menyoung, Bestwick, Andrew J., Tharratt, Kevin, Coniglio, William, Jaroszynski, Jan, Watanabe, Kenji, Taniguchi, Takashi, Goldhaber-Gordon, David
Format: Online
Language:English
Published: Nature Publishing Group 2016
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5187585/
id pubmed-5187585
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spelling pubmed-51875852017-01-03 Robust fractional quantum Hall effect in the N=2 Landau level in bilayer graphene Diankov, Georgi Liang, Chi-Te Amet, François Gallagher, Patrick Lee, Menyoung Bestwick, Andrew J. Tharratt, Kevin Coniglio, William Jaroszynski, Jan Watanabe, Kenji Taniguchi, Takashi Goldhaber-Gordon, David Article The fractional quantum Hall effect is a canonical example of electron–electron interactions producing new ground states in many-body systems. Most fractional quantum Hall studies have focussed on the lowest Landau level, whose fractional states are successfully explained by the composite fermion model. In the widely studied GaAs-based system, the composite fermion picture is thought to become unstable for the N≥2 Landau level, where competing many-body phases have been observed. Here we report magneto-resistance measurements of fractional quantum Hall states in the N=2 Landau level (filling factors 4<|ν|<8) in bilayer graphene. In contrast with recent observations of particle–hole asymmetry in the N=0/N=1 Landau levels of bilayer graphene, the fractional quantum Hall states we observe in the N=2 Landau level obey particle–hole symmetry within the fully symmetry-broken Landau level. Possible alternative ground states other than the composite fermions are discussed. Nature Publishing Group 2016-12-21 /pmc/articles/PMC5187585/ /pubmed/28000663 http://dx.doi.org/10.1038/ncomms13908 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
repository_type Open Access Journal
institution_category Foreign Institution
institution US National Center for Biotechnology Information
building NCBI PubMed
collection Online Access
language English
format Online
author Diankov, Georgi
Liang, Chi-Te
Amet, François
Gallagher, Patrick
Lee, Menyoung
Bestwick, Andrew J.
Tharratt, Kevin
Coniglio, William
Jaroszynski, Jan
Watanabe, Kenji
Taniguchi, Takashi
Goldhaber-Gordon, David
spellingShingle Diankov, Georgi
Liang, Chi-Te
Amet, François
Gallagher, Patrick
Lee, Menyoung
Bestwick, Andrew J.
Tharratt, Kevin
Coniglio, William
Jaroszynski, Jan
Watanabe, Kenji
Taniguchi, Takashi
Goldhaber-Gordon, David
Robust fractional quantum Hall effect in the N=2 Landau level in bilayer graphene
author_facet Diankov, Georgi
Liang, Chi-Te
Amet, François
Gallagher, Patrick
Lee, Menyoung
Bestwick, Andrew J.
Tharratt, Kevin
Coniglio, William
Jaroszynski, Jan
Watanabe, Kenji
Taniguchi, Takashi
Goldhaber-Gordon, David
author_sort Diankov, Georgi
title Robust fractional quantum Hall effect in the N=2 Landau level in bilayer graphene
title_short Robust fractional quantum Hall effect in the N=2 Landau level in bilayer graphene
title_full Robust fractional quantum Hall effect in the N=2 Landau level in bilayer graphene
title_fullStr Robust fractional quantum Hall effect in the N=2 Landau level in bilayer graphene
title_full_unstemmed Robust fractional quantum Hall effect in the N=2 Landau level in bilayer graphene
title_sort robust fractional quantum hall effect in the n=2 landau level in bilayer graphene
description The fractional quantum Hall effect is a canonical example of electron–electron interactions producing new ground states in many-body systems. Most fractional quantum Hall studies have focussed on the lowest Landau level, whose fractional states are successfully explained by the composite fermion model. In the widely studied GaAs-based system, the composite fermion picture is thought to become unstable for the N≥2 Landau level, where competing many-body phases have been observed. Here we report magneto-resistance measurements of fractional quantum Hall states in the N=2 Landau level (filling factors 4<|ν|<8) in bilayer graphene. In contrast with recent observations of particle–hole asymmetry in the N=0/N=1 Landau levels of bilayer graphene, the fractional quantum Hall states we observe in the N=2 Landau level obey particle–hole symmetry within the fully symmetry-broken Landau level. Possible alternative ground states other than the composite fermions are discussed.
publisher Nature Publishing Group
publishDate 2016
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5187585/
_version_ 1613826145361330176

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