Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co2FeSi0.5Al0.5/Ge(111)

Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co2FeSi0.5Al0.5/Ge(111)

Halfmetal-semiconductor interfaces are crucial for hybrid spintronic devices. Atomically sharp interfaces with high spin polarisation are required for efficient spin injection. In this work we show that thin film of half-metallic full Heusler alloy Co2FeSi0.5Al0.5 with uniform thickness and B2 order...

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Bibliographic Details
Main Authors: Nedelkoski, Zlatko, Kuerbanjiang, Balati, Glover, Stephanie E., Sanchez, Ana M., Kepaptsoglou, Demie, Ghasemi, Arsham, Burrows, Christopher W., Yamada, Shinya, Hamaya, Kohei, Ramasse, Quentin M., Hasnip, Philip J., Hase, Thomas, Bell, Gavin R., Hirohata, Atsufumi, Lazarov, Vlado K.
Format: Online
Language:English
Published: Nature Publishing Group 2016
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5116668/

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https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5116668/

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