Enhancing electric-field control of ferromagnetism through nanoscale engineering of high-Tc MnxGe1−x nanomesh

Voltage control of magnetism in ferromagnetic semiconductor has emerged as an appealing solution to significantly reduce the power dissipation and variability beyond current CMOS technology. However, it has been proven to be very challenging to achieve a candidate with high Curie temperature (Tc), c...

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Bibliographic Details
Main Authors: Nie, Tianxiao, Tang, Jianshi, Kou, Xufeng, Gen, Yin, Lee, Shengwei, Zhu, Xiaodan, He, Qinglin, Chang, Li-Te, Murata, Koichi, Fan, Yabin, Wang, Kang L.
Format: Online
Language:English
Published: Nature Publishing Group 2016
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5080415/