Topological band-order transition and quantum spin Hall edge engineering in functionalized X-Bi(111) (X = Ga, In, and Tl) bilayer
Functionalized X-Bi bilayers (X = Ga, In, and Tl) with halogens bonded on their both sides have been recently claimed to be the giant topological insulators due to the strong band inversion strengths. Employing the first-principles electronic structure calculation, we find the topological band order...
Main Authors: | Kim, Youngjae, Yun, Won Seok, Lee, J. D. |
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Format: | Online |
Language: | English |
Published: |
Nature Publishing Group
2016
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Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5022058/ |
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