X-ray detection with zinc-blende (cubic) GaN Schottky diodes
The room temperature X-ray responses as functions of time of two n type cubic GaN Schottky diodes (200 μm and 400 μm diameters) are reported. The current densities as functions of time for both diodes showed fast turn-on transients and increases in current density when illuminated with X-ray photons...
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| Format: | Online |
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Nature Publishing Group
2016
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4941580/ |
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pubmed-49415802016-07-20 X-ray detection with zinc-blende (cubic) GaN Schottky diodes Gohil, T. Whale, J. Lioliou, G. Novikov, S. V. Foxon, C. T. Kent, A. J. Barnett, A. M. Article The room temperature X-ray responses as functions of time of two n type cubic GaN Schottky diodes (200 μm and 400 μm diameters) are reported. The current densities as functions of time for both diodes showed fast turn-on transients and increases in current density when illuminated with X-ray photons of energy up to 35 keV. The diodes were also electrically characterized: capacitance, implied depletion width and dark current measurements as functions of applied bias at room temperature are presented. At −5 V reverse bias, the capacitances of the diodes were measured to be (84.05 ± 0.01) pF and (121.67 ± 0.02) pF, respectively. At −5 V reverse bias, the dark current densities of the diodes were measured to be (347.2 ± 0.4) mA cm−2 and (189.0 ± 0.2) mA cm−2, respectively. The Schottky barrier heights of the devices (0.52 ± 0.07) eV and (0.63 ± 0.09) eV, respectively, were extracted from the forward dark current characteristics. Nature Publishing Group 2016-07-12 /pmc/articles/PMC4941580/ /pubmed/27403806 http://dx.doi.org/10.1038/srep29535 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
| repository_type |
Open Access Journal |
| institution_category |
Foreign Institution |
| institution |
US National Center for Biotechnology Information |
| building |
NCBI PubMed |
| collection |
Online Access |
| language |
English |
| format |
Online |
| author |
Gohil, T. Whale, J. Lioliou, G. Novikov, S. V. Foxon, C. T. Kent, A. J. Barnett, A. M. |
| spellingShingle |
Gohil, T. Whale, J. Lioliou, G. Novikov, S. V. Foxon, C. T. Kent, A. J. Barnett, A. M. X-ray detection with zinc-blende (cubic) GaN Schottky diodes |
| author_facet |
Gohil, T. Whale, J. Lioliou, G. Novikov, S. V. Foxon, C. T. Kent, A. J. Barnett, A. M. |
| author_sort |
Gohil, T. |
| title |
X-ray detection with zinc-blende (cubic) GaN Schottky diodes |
| title_short |
X-ray detection with zinc-blende (cubic) GaN Schottky diodes |
| title_full |
X-ray detection with zinc-blende (cubic) GaN Schottky diodes |
| title_fullStr |
X-ray detection with zinc-blende (cubic) GaN Schottky diodes |
| title_full_unstemmed |
X-ray detection with zinc-blende (cubic) GaN Schottky diodes |
| title_sort |
x-ray detection with zinc-blende (cubic) gan schottky diodes |
| description |
The room temperature X-ray responses as functions of time of two n type cubic GaN Schottky diodes (200 μm and 400 μm diameters) are reported. The current densities as functions of time for both diodes showed fast turn-on transients and increases in current density when illuminated with X-ray photons of energy up to 35 keV. The diodes were also electrically characterized: capacitance, implied depletion width and dark current measurements as functions of applied bias at room temperature are presented. At −5 V reverse bias, the capacitances of the diodes were measured to be (84.05 ± 0.01) pF and (121.67 ± 0.02) pF, respectively. At −5 V reverse bias, the dark current densities of the diodes were measured to be (347.2 ± 0.4) mA cm−2 and (189.0 ± 0.2) mA cm−2, respectively. The Schottky barrier heights of the devices (0.52 ± 0.07) eV and (0.63 ± 0.09) eV, respectively, were extracted from the forward dark current characteristics. |
| publisher |
Nature Publishing Group |
| publishDate |
2016 |
| url |
https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4941580/ |
| _version_ |
1613607787400527872 |